ICs integrate GaN power with high-frequency control

GaNSense control ICs from Navitas incorporate a high-voltage GaN FET as well as a low-voltage silicon system controller in a solitary surface-mount bundle. Planned for fast-charging power systems, preliminary applications cover 20-W to 150-W tablet computer, mobile phone, as well as laptop computer battery chargers; customer as well as house device products; as well as supporting products in information facility as well as 400-V EV systems.

The initial GaNSense ICs consist of high-frequency quasi-resonant flybacks sustaining QR, DCM, CCM, as well as multiple-frequency, hybrid-mode procedures with regularities as much as 225 kHz. Instruments are offered in a surface-mount QFN bundle (NV695x collection) or as a chipset (NV9510x + NV61xx) for layout adaptability. On the second side, incorporated simultaneous rectifier power ICs (NV97xx) accomplish optimal performance at any kind of lots problem contrasted to traditional rectifiers.

GaNSense attributes, such as loss-less present picking up, HV startup, regularity jumping, reduced standby power, as well as broad V DD input voltage, make it possible for tiny, reliable, cool-running systems with less parts as well as no R FEELING hot-spot. Integrated security features consist of 800-V short-term voltage, 2-kV ESD, overcurrent, overtemperature, as well as overvoltage.

GaNSense item web page

Navitas Semiconductor

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